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| IPD22N08S2L-50 OptiMOS(R) Power-Transistor Features * N-channel Logic Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (lead free) * Ultra low Rds(on) * 100% Avalanche tested Product Summary V DS R DS(on),max ID 75 50 25 V m A PG-TO252-3-11 Type IPD22N08S2L-50 Package PG-TO252-3-11 Marking 2N08L50 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=22A Value 27 19 108 94 20 75 -55 ... +175 55/175/56 mJ V W C Unit A Rev. 1.0 page 1 2006-07-18 IPD22N08S2L-50 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics1) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=31 A V DS=75 V, V GS=0 V, T j=25 C V DS=75 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance I GSS R DS(on) RDS(on) V GS=20 V, V DS=0 V V GS=5 V, I D=50 A V GS=10 V, I D=50 A, 75 1.2 1.6 0.01 2.0 1 A V 2 100 75 50 K/W - 1 1 58.0 38.5 100 100 65 50.0 nA m m Rev. 1.0 page 2 2006-07-18 IPD22N08S2L-50 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current1) Diode pulse current1) Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=22 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s V R=40 V, I F=I S, di F/dt =100 A/s 0.9 25 100 1.3 V A Q gs Q gd Qg V plateau V DD=60 V, I D=22 A, V GS=0 to 10 V 2 9 21 3.9 2.7 12 33 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=37 V, V GS=10 V, I D=22 A, R G=9.1 V GS=0 V, V DS=25 V, f =1 MHz 630 160 75 6 20 26 10 ns pF Reverse recovery time1) t rr - 44 - ns Reverse recovery charge1) Q rr - 66 - nC 1) 2) Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-07-18 IPD22N08S2L-50 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 10 V 80 70 30 25 60 20 50 P tot [W] 40 30 I D [A] 0 50 100 150 200 15 10 20 5 10 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 0.5 10 1 s 0 100 10 s 0.1 Z thJC [K/W] 0.05 I D [A] 10 -1 100 s 0.01 1 ms 10 10-2 single pulse 1 0.1 1 V DS [V] 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.0 page 4 2006-07-18 IPD22N08S2L-50 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 100 10 V 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 C parameter: V GS 170 3.5 V 3V 4V 150 130 RDS(on) [mW] 5V 110 I D [A] 4.5 V 50 4.5 V 90 70 4V 3.5 V 3V 50 5V 10 V 0 0 2 4 6 8 2.5 V 30 10 0 10 20 30 40 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 80 8 Typ. Forward transconductance g fs = f(I D); T j = 25C parameter: g fs 40 60 30 40 g fs [S] 25 C 175 C -55 C I D [A] 20 20 10 0 1 2 3 4 5 0 0 10 20 30 40 V GS [V] I D [A] Rev. 1.0 page 5 2006-07-18 IPD22N08S2L-50 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 11 A; VGS = 10 V 90 10 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.5 80 2 70 155 A R DS(on) [m] V GS(th) [V] 60 1.5 31 A 50 1 40 0.5 30 20 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 12 Typical forward diode characteristicis IF = f(VSD) parameter: T j 104 103 103 Ciss 102 C [pF] Coss 10 2 I F [A] 101 Crss 175 C 25 C 100 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V DS [V] V SD [V] Rev. 1.0 page 6 2006-07-18 IPD22N08S2L-50 13 Typical avalanche energy E AS = f(T j) parameter: I D 400 5.5 A 14 Typ. gate charge V GS = f(Q gate); I D = 22 A pulsed 12 350 10 300 8 250 15 V 60 V E AS [mJ] 200 150 V GS [V] 75 125 175 11 A 6 4 100 50 0 25 0 0 10 20 30 22 A 2 T j [C] Q gate [nC] 15 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 16 Gate charge waveforms 90 V GS 85 Qg V BR(DSS) [V] 80 75 70 Q gate Q gs Q gd 65 -60 -20 20 60 100 140 180 T j [C] Rev. 1.0 page 7 2006-07-18 IPD22N08S2L-50 Published by Infineon Technologies AG Am Campeon 1-12 D-85579 Neubiberg (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-07-18 |
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